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Study of the near Si-SiO2 interface trap layer using the charge pumping technique

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2 Author(s)
Y. Maneglia ; Lab. de Phys. des Composants a Semicond., ENSERG, Grenoble, France ; D. Bauza

It is shown that the charge pumping technique allows the extraction of the Si-SiO2 interface depth trap concentration profile. This profile is found of the form Nt(x)=Nts exp(-x/d)+Nto where d is the distance in the oxide from the interface. The method is discussed as well as the expression of the trap density obtained

Published in:

Semiconductor Conference, 1997. CAS '97 Proceedings., 1997 International  (Volume:1 )

Date of Conference:

7-11 Oct 1997