Cart (Loading....) | Create Account
Close category search window
 

Study of the near Si-SiO2 interface trap layer using the charge pumping technique

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

2 Author(s)
Maneglia, Y. ; Lab. de Phys. des Composants a Semicond., ENSERG, Grenoble, France ; Bauza, D.

It is shown that the charge pumping technique allows the extraction of the Si-SiO2 interface depth trap concentration profile. This profile is found of the form Nt(x)=Nts exp(-x/d)+Nto where d is the distance in the oxide from the interface. The method is discussed as well as the expression of the trap density obtained

Published in:

Semiconductor Conference, 1997. CAS '97 Proceedings., 1997 International  (Volume:1 )

Date of Conference:

7-11 Oct 1997

Need Help?


IEEE Advancing Technology for Humanity About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies

A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2014 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.