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Stability and Low-Frequency Noise in InAs NW Parallel-Array Thin-Film Transistors

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10 Author(s)
Wahl, R.E. ; Department of Electrical Engineering and Flexible Display Center, Arizona State University, Tempe, AZ, USA ; Wang, F. ; Chung, H.E. ; Kunnen, G.R.
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In this letter, we present the dc characteristics, stability, and low-frequency noise (LFN) measurements, for n-type indium arsenide nanowire (NW) parallel-array thin-film transistors (TFTs) with a global back gate. These devices perform with mobilities ranging from 200–1200 ${rm cm}^{2}{rm V}^{-1}{rm s}^{-1}$ and produce a threshold voltage shift less than 0.25 V after 10 000 $s$ of stress. The resulting LFN measurements indicate that the $1/f$ noise can be modeled by the number fluctuation model, at low drain currents, which can provide an essential guideline for the device design considerations of NW TFTs.

Published in:

Electron Device Letters, IEEE  (Volume:34 ,  Issue: 6 )