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Stability and Low-Frequency Noise in InAs NW Parallel-Array Thin-Film Transistors

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10 Author(s)
Richard E. Wahl ; Department of Electrical Engineering and Flexible Display Center, Arizona State University, Tempe, AZ, USA ; Fengyun Wang ; Hugh E. Chung ; George R. Kunnen
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In this letter, we present the dc characteristics, stability, and low-frequency noise (LFN) measurements, for n-type indium arsenide nanowire (NW) parallel-array thin-film transistors (TFTs) with a global back gate. These devices perform with mobilities ranging from 200-1200 cm2V-1s-1 and produce a threshold voltage shift less than 0.25 V after 10 000 s of stress. The resulting LFN measurements indicate that the 1/f noise can be modeled by the number fluctuation model, at low drain currents, which can provide an essential guideline for the device design considerations of NW TFTs.

Published in:

IEEE Electron Device Letters  (Volume:34 ,  Issue: 6 )