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A quantitative analysis of the penetration of SnO2 into porous silicon

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8 Author(s)
Gartner, M. ; Inst. of Phys. Chem., Acad. of Sci., Bucharest, Romania ; Savaniu, C. ; Parlog, C. ; Zaharescu, M.
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The oxidation of monocrystalline silicon wafer (even at low temperatures ~500°C) through the pores of SnO2 sol-gel films deposited on it and the penetration of the Sn into the depth of porous silicon (PS) are quantitatively analyzed by Spectroscopic Ellipsometry (SE), Rutherford Back Scattering (RBS) and Infrared Spectroscopy (IR)

Published in:

Semiconductor Conference, 1997. CAS '97 Proceedings., 1997 International  (Volume:1 )

Date of Conference:

7-11 Oct 1997