By Topic

EOT Scaling of {\rm TiO}_{2}/{\rm Al}_{2}{\rm O}_{3} on Germanium pMOSFETs and Impact of Gate Metal Selection

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

4 Author(s)
Zhang, L. ; Department of Electrical Engineering, Stanford University, Stanford, CA, USA ; Gunji, M. ; Thombare, S. ; McIntyre, P.C.

{\rm TiO}_{2}/{\rm Al}_{2}{\rm O}_{3}/{\rm Ge} gate stacks have promising characteristics for future germanium-channel high-performance MOSFETs. In this letter, {\rm TiO}_{2}/{\rm Al}_{2}{\rm O}_{3} bilayer high-k dielectrics with EOT 0.65 nm are demonstrated and used in Ge pMOSFETs for the first time, giving low subthreshold swing (71 mV/dec) and large on-state current (28 A/um). In addition, detailed investigations of these devices with two different gate metals—Al/W and Al/Pt—are performed for stable metal/ {\rm TiO}_{2} interfaces and EOT scaling.

Published in:

Electron Device Letters, IEEE  (Volume:34 ,  Issue: 6 )