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BSIM—SPICE Models Enable FinFET and UTB IC Designs

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7 Author(s)
Paydavosi, N. ; Dept. of Electr. Eng. & Comput. Sci., Univ. of California, Berkeley, Berkeley, CA, USA ; Venugopalan, S. ; Chauhan, Y.S. ; Duarte, J.P.
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Two turn-key surface potential-based compact models are developed to simulate multigate transistors for integrated circuit (IC) designs. The BSIM-CMG (common-multigate) model is developed to simulate double-, triple-, and all-around-gate FinFETs and it is selected as the world's first industry-standard compact model for the FinFET. The BSIM-IMG (independent-multigate) model is developed for independent double-gate, ultrathin body (UTB) transistors, capturing the dynamic threshold voltage adjustment with back gate bias. Starting from long-channel devices, the basic models are first obtained using a Poisson-carrier transport approach. The basic models agree with the results of numerical two-dimensional device simulators. The real-device effects then augment the basic models. All the important real-device effects, such as short-channel effects (SCEs), quantum mechanical confinement effects, mobility degradation, and parasitics are included in the models. BSIM-CMG and BSIM-IMG have been validated with hardware silicon-based data from multiple technologies. The developed models also meet the stringent quality assurance tests expected of production level models.

Introduction to BSIM-SPICE Models Enable FinFET and UTB IC Designs.

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Access, IEEE  (Volume:1 )
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