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Memristor-Based Nonvolatile Random Access Memory: Hybrid Architecture for Low Power Compact Memory Design

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4 Author(s)
Sarwar, S.S. ; Dept. of Electr. & Electron. Eng., Bangladesh Univ. of Eng. & Technol., Dhaka, Bangladesh ; Saqueb, S.A.N. ; Quaiyum, F. ; Rashid, A.B.M.H.-U.

In this paper, a new approach toward the design of a memristor based nonvolatile static random-access memory (SRAM) cell using a combination of memristor and metal-oxide semiconductor devices is proposed. Memristor and MOSFETs of the Taiwan Semiconductor Manufacturing Company's 180-nm technology are used to form a single cell. The predicted area of this cell is significantly less and the average read-write power is ~25 times less than a conventional 6-T SRAM cell of the same complementary metal-oxide semiconductor technology. Read time is much less than the 6-T SRAM cell. However, write time is a bit higher, and can be improved by increasing the mobility of the memristor. The nonvolatile characteristic of the cell makes it attractive for nonvolatile random access memory design.

Three transistor-two memristor SRAM cell. Three transistor-two memristor SRAM cell.

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Access, IEEE  (Volume:1 )
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