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Investigation of Backgate-Bias Dependence of Threshold-Voltage Sensitivity to Process and Temperature Variations for Ultra-Thin-Body Hetero-Channel MOSFETs

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2 Author(s)
Chang-Hung Yu ; Dept. of Electron. Eng., Nat. Chiao Tung Univ., Hsinchu, Taiwan ; Pin Su

This paper investigates the impact of backgate bias (Vbg) on the sensitivity of threshold voltage (Vth) to process and temperature variations for ultra-thin-body (UTB) GeOI and InGaAs-OI MOSFETs. Our study indicates that the quantum-confinement effect significantly suppresses the Vbg dependence of the Vth sensitivity to process and temperature variations. Since Si, Ge, and InGaAs channels exhibit different degrees of quantum confinement, the impact of quantum confinement has to be considered when one-to-one comparisons among hetero-channel UTB devices regarding variability are made. Our study is crucial to the robustness of multi- Vth designs with advanced UTB technologies.

Published in:

Device and Materials Reliability, IEEE Transactions on  (Volume:14 ,  Issue: 1 )