Cart (Loading....) | Create Account
Close category search window
 

Growth properties and resistive switching effects of diamond-like carbon films deposited using a linear ion source

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

3 Author(s)
Dai, Wei ; Korea Institute of Science and Technology, Seoul 130-650, South Korea and Ningbo Key Laboratory of Marine Protection Materials, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201, People's Republic of China ; Ke, Peiling ; Wang, Aiying

Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1116/1.4803741 

Diamond-like carbon (DLC) films were prepared using an anode-layer linear ion beam source with C2H2 as the precursor and various negative bias voltages. The growth properties, microstructures, mechanical properties, and the resistive switching behaviors of the as-deposited DLC films were investigated as a function of bias voltage. The results showed that adjusting the bias voltage could vary the carbon atomic bonding structure (sp3/sp2 carbon hybridized bonding) of the films. The sp3/sp2 ratio initially increased as bias voltage increased and then decreased once the bias voltage exceeded -100 V. The variations in the film hardness and residual stress at different bias voltages were similar in profile to the sp3 bond fractions, indicating that both the residual stress and the mechanical properties of the DLC films were highly dependent on sp3-C bonding structures. The resistive switching characteristics of the DLC films were studied via a Cu/DLC/Pt cell structure. It was found that the bias voltages had a significant influence on the resistive switching behaviors of the DLC films. The film deposited with a bias voltage of 0 V showed excellent resistive switching effects with an ON/OFF ratio higher than 70 and device yield of about 90%, while the films deposited with higher bias voltages presented poor resistive switching effects. The sp2/sp3 ratio of the films was believed to account for the favorable resistive switching performances.

Published in:

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures  (Volume:31 ,  Issue: 3 )

Date of Publication:

May 2013

Need Help?


IEEE Advancing Technology for Humanity About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies

A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2014 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.