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A Wide Temperature, Radiation Tolerant, CMOS-Compatible Precision Voltage Referencefor Extreme Radiation Environment Instrumentation Systems

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7 Author(s)
McCue, B.M. ; Dept. of Electr. Eng. & Comput. Sci., Univ. of Tennessee, Knoxville, TN, USA ; Blalock, B.J. ; Britton, C.L. ; Potts, J.
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Many design techniques have been incorporated into modern CMOS design practices to improve radiation tolerance of integrated circuits. Annular-gate NMOS structures have been proven to be significantly more radiation tolerant than the standard, straight-gate variety. Many circuits can be designed using the annular-gate NMOS and the inherently radiation tolerant PMOS. Bandgap reference circuits, however, typically require p-n junction diodes. These p-n junction diodes are the dominating factor in radiation degradation in bandgap reference circuits. This paper proposes a different approach to bandgap reference design to alleviate the radiation susceptibility presented by the p-n junction diodes.

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Nuclear Science, IEEE Transactions on  (Volume:60 ,  Issue: 3 )