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Epitaxial growth by low pressure chemical vapour deposition of Si 1-xGex/Si and applications

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5 Author(s)
Vescan, L. ; Inst. fur Schicht- und Ionentech., Forschungszentrum Julich GmbH, Germany ; Goryll, M. ; Grimm, K. ; Wickenhauser, S.
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Low pressure chemical vapour deposition of Si and SiGe was investigated for novel devices for microelectronics and optoelectronics. Results on facet formation, nanostructures by lateral confinement with facets, increase of the critical thickness in finite pads, 2D to 3D growth transition and application to light emitting diodes with room temperature operation will be presented

Published in:

Semiconductor Conference, 1997. CAS '97 Proceedings., 1997 International  (Volume:2 )

Date of Conference:

7-11 Oct 1997