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We discuss the measurement accuracy of the test circuit, which can evaluate statistical characteristics of gate leakage current of small area metal-oxide-semiconductor field-effect transistors (MOSFETs) in a very short time. The accuracy and precision of the gate leakage current obtained by the test circuit are verified for a wide range. As a result it is confirmed that very accurate gate current of 10-17 A ±10% is able to be measured with this method. Using this test circuit, we can evaluate the gate leakage current at a wide electric field range, which is important in discussing the conduction mechanism of gate leakage current.
Date of Publication: Aug. 2013