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Selective epitaxial growth Si resonant-cavity photodetector

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6 Author(s)
G. W. Neudeck ; Purdue Univ., West Lafayette, IN, USA ; J. Denton ; J. Qi ; J. D. Schaub
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An novel resonant-cavity Si photodiode was fabricated using a selective epitaxial growth process. The photodiode shows a bandwidth over 5 GHz, and a quantum efficiency over 65% at 700 nm. Compared to the previously reported Si resonant-cavity Si photodetectors, this photodiode process is more compatible with Si integrated circuit technology.

Published in:

IEEE Photonics Technology Letters  (Volume:10 ,  Issue: 1 )