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Proton irradiation induced defects in oxygenated Si p-n junctions

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4 Author(s)
Botila, T. ; Nat. Inst. for Mater. Sci., Bucharest, Romania ; Pintilie, I. ; Petre, D. ; Pintilie, L.

The proton irradiation induced defects in oxygenated Si p-n junctions have been investigated using both optical charging spectroscopy (OCS) and thermally stimulated currents (TSC) methods in the temperature range 25-250 K. The measurements were performed for 3 fluences of proton irradiation: 1.07×1012 cm-2 , 1.084×1013 cm-2 and 1.19×10 14 cm-2

Published in:

Semiconductor Conference, 1997. CAS '97 Proceedings., 1997 International  (Volume:2 )

Date of Conference:

7-11 Oct 1997