By Topic

Deep-ultraviolet tailored- and low-refractive index antireflection coatings for light-extraction enhancement of light emitting diodes

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

4 Author(s)
Yan, Xing ; Department of Physics, Applied Physics, and Astronomy, Rensselaer Polytechnic Institute, Troy, New York 12180, USA ; Shatalov, Max ; Saxena, Tanuj ; Shur, Michael S.

Your organization might have access to this article on the publisher's site. To check, click on this link: 

An omnidirectional antireflection (AR) coating for a deep-ultraviolet (UV) AR band is designed and fabricated on the sapphire substrate of a deep-UV flip-chip light-emitting diode (LED) device. The two-layer AR coating uses the tailored- and low-refractive index nanoporous alumina fabricated by glancing-angle deposition methodology. The AR coating effectively matches the refractive indices between the air and sapphire substrate. At close-to-normal angles of incidence, this AR coating almost completely eliminates the Fresnel reflection at the sapphire/air interface of the deep-UV LED device. The resulting improvement of the light-extraction efficiency by 8% is in good agreement with the simulation results. For a total thickness of 172 nm for the two-layer AR coating, extinction was negligible (<2%). The results show that nanoporous alumina thin films are excellent tailored- and low-refractive index thin film materials for high-performance deep-UV AR coating applications.

Published in:

Journal of Applied Physics  (Volume:113 ,  Issue: 16 )