By Topic

RF Performance Limits and Operating Physics Arising From the Lack of a Bandgap in Graphene Transistors

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

5 Author(s)
Holland, K.D. ; Dept. of Electr. & Comput. Eng., Univ. of Alberta, Edmonton, AB, Canada ; Paydavosi, N. ; Neophytou, N. ; Kienle, D.
more authors

With the aid of self-consistent quantum-mechanical simulations and simple expressions for the radio-frequency (RF) metrics, we examine the impact of a lack of a bandgap on limiting the RF potential of graphene transistors. We consider the transconductance, gate-input capacitance, output conductance, unity-current-gain frequency, and unity-power-gain frequency. We show that the lack of a bandgap leads to all RF metrics being optimal when the bias point is chosen such that the drain Fermi level aligns with the Dirac point at the midpoint of the channel. We are also able to quantify the precise extent to which the lack of a bandgap limits the transistor's cutoff frequencies, an issue that has been flagged as requiring crucial attention to make graphene transistors competitive. For an 18-nm channel length, we show that the extrinsic unity-current-gain frequency could be improved by 300 GHz and the unity-power-gain frequency could be doubled if a bandgap could be introduced to reduce the output conductance to zero.

Published in:

Nanotechnology, IEEE Transactions on  (Volume:12 ,  Issue: 4 )