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RF Performance Limits and Operating Physics Arising From the Lack of a Bandgap in Graphene Transistors

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5 Author(s)
Holland, K.D. ; Dept. of Electr. & Comput. Eng., Univ. of Alberta, Edmonton, AB, Canada ; Paydavosi, N. ; Neophytou, N. ; Kienle, D.
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With the aid of self-consistent quantum-mechanical simulations and simple expressions for the radio-frequency (RF) metrics, we examine the impact of a lack of a bandgap on limiting the RF potential of graphene transistors. We consider the transconductance, gate-input capacitance, output conductance, unity-current-gain frequency, and unity-power-gain frequency. We show that the lack of a bandgap leads to all RF metrics being optimal when the bias point is chosen such that the drain Fermi level aligns with the Dirac point at the midpoint of the channel. We are also able to quantify the precise extent to which the lack of a bandgap limits the transistor's cutoff frequencies, an issue that has been flagged as requiring crucial attention to make graphene transistors competitive. For an 18-nm channel length, we show that the extrinsic unity-current-gain frequency could be improved by 300 GHz and the unity-power-gain frequency could be doubled if a bandgap could be introduced to reduce the output conductance to zero.

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Nanotechnology, IEEE Transactions on  (Volume:12 ,  Issue: 4 )