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Response of 100% internal quantum efficiency silicon photodiodes to 200 eV-40 keV electrons

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4 Author(s)
H. O. Funsten ; Los Alamos Nat. Lab., NM, USA ; D. M. Suszcynsky ; S. M. Ritzau ; R. Korde

Electron irradiation of 100% internal quantum efficiency silicon photodiodes having a thin (60 Å) SiO2 dead layer results in measured responsivities ranging from 0.056 A/W at an incident electron energy E0=0.2 keV to 0.24 A/W at E0=40 keV. By comparing the data to a Monte Carlo simulation of electron interactions with the photodiode over an energy range of 1-40 keV, we derive an average electron-hole pair creation energy of 3.71 eV, in close agreement with other studies. Analysis of electron energy lost to processes that do not contribute to electron-hole pair creation shows that the energy lost in the SiO2 dead layer is dominant for E 0<1.5 keV, whereas the energy removed by backscattered electrons is dominant for E0>1.5 keV. At E0=300 eV, the Monte Carlo simulation results show that the electron projected range is significantly less than the dead layer thickness even though the measured response is 0.082 A/W, indicating that electron-hole pairs generated in the oxide dead layer are collected by the junction

Published in:

IEEE Transactions on Nuclear Science  (Volume:44 ,  Issue: 6 )