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Fast and Accurate Characterization of MOS and Interconnect Capacitance Using Direct Charge Measurement (DCM)

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4 Author(s)
Masaharu Goto ; Agilent Technologies International Japan, Ltd., Hachioji-shi, Tokyo, Japan ; Yasuhiro Miyake ; Jun Taniguchi ; Kenichi Takano

A fast and accurate capacitance measurement technique, direct charge measurement (DCM), is introduced to improve productivity of semiconductor parametric testing. The approach is simpler and much faster compared with conventional method using charge-based capacitance measurement (CBCM) or LCR meter. On-chip active device is not an essential necessity for DCM test structure and it is easy to implement parallel measurements. The basic theory, parallel measurement method and mathematical analysis on non-linear MOS capacitance measurement are explained. For interconnect capacitance measurement, an extension of DCM, degenerated exhaustive direct charge measurement (DEDCM) is presented as a faster, more accurate and thorough characterization technique. Experimental results show good data matching and significant throughput improvement over conventional LCR meter measurements.

Published in:

IEEE Transactions on Semiconductor Manufacturing  (Volume:26 ,  Issue: 3 )