By Topic

Si surface passivation by Al2O3 thin films deposited using a low thermal budget atomic layer deposition process

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

6 Author(s)
Seguini, G. ; Laboratorio MDM, IMM-CNR, Via C. Olivetti 2, 20864 Agrate Brianza (MB), Italy ; Cianci, E. ; Wiemer, C. ; Saynova, D.
more authors

Your organization might have access to this article on the publisher's site. To check, click on this link: 

High-quality surface passivation of crystalline Si is achieved using 10 nm thick Al2O3 films fabricated by thermal atomic layer deposition at 100 °C. After a 5 min post deposition annealing at 200 °C, the effective carrier lifetime is 1 ms, indicating a functional level of surface passivation. The interplay between the chemical and the field effect passivation is investigated monitoring the density of interface traps and the amount of fixed charges with conductance-voltage and capacitance-voltage techniques. The physical mechanisms underlying the surface passivation are described. The combination of low processing temperatures, thin layers, and good passivation properties facilitate a technology for low-temperature solar cells.

Published in:

Applied Physics Letters  (Volume:102 ,  Issue: 13 )