By Topic

Novel gain cell with ferroelectric coplanar capacitor for high-density nonvolatile random-access memory

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

3 Author(s)
Aoki, M. ; Fujitsu Labs. Ltd., Atsugi, Japan ; Takauchi, H. ; Tamura, H.

The authors propose a new nonvolatile gain memory cell in which one individual cell is selected by using only two wires. The proposed cell surpasses conventional DRAMs and FeRAMs in terms of cell area and speed. It can be implemented by adding a planar ferroelectric film and a single electrode layer to the conventional CMOS process. Thus, it offers a viable way of providing ferroelectric nonvolatile memory functions using existing CMOS technology.

Published in:

Electron Devices Meeting, 1997. IEDM '97. Technical Digest., International

Date of Conference:

10-10 Dec. 1997