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The authors propose a new nonvolatile gain memory cell in which one individual cell is selected by using only two wires. The proposed cell surpasses conventional DRAMs and FeRAMs in terms of cell area and speed. It can be implemented by adding a planar ferroelectric film and a single electrode layer to the conventional CMOS process. Thus, it offers a viable way of providing ferroelectric nonvolatile memory functions using existing CMOS technology.