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Damascene integration of copper and ultra-low-k xerogel for high performance interconnects

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18 Author(s)
Zielinski, E.M. ; Semicond. Process & Device Center, Texas Instrum. Inc., Dallas, TX, USA ; Russell, S.W. ; List, R.S. ; Wilson, A.M.
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Copper has been successfully integrated in ultra-low k xerogel in a damascene structure. Resistance was shown to decrease by 30% with lower capacitance, relative to an aluminum/oxide baseline. For an equivalent resistance, an aluminum/oxide architecture would have 29% higher capacitance than that demonstrated here. Copper in xerogel trenches shows great promise as the next generation metallization system.

Published in:

Electron Devices Meeting, 1997. IEDM '97. Technical Digest., International

Date of Conference:

10-10 Dec. 1997