A comprehensive SiGe Monte Carlo model for transient 2D simulations of HBTs

A comprehensive and efficient Monte Carlo (MC) model for electrons and holes in strained SiGe is presented which is based on new theoretical and experimental results. The 2D device model for stationary and transient simulation of HBTs contains several new key features like, for example, an improved particle-mesh coupling method or a novel current evaluation scheme which yields solenoidal and statistically enhanced terminal currents. Quasiballistic transport is confirmed by MC simulations in the base/collector junction of modern narrow base HBTs and the breakdown of the CPU efficient drift-diffusion approximation is demonstrated.