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Single gate 0.15 /spl mu/m CMOS devices fabricated using RTCVD in-situ boron doped Si/sub 1-x/Ge/sub x/ gates

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5 Author(s)
Li, V.Z.-Q. ; Dept. of Electr. & Comput. Eng., North Carolina State Univ., Raleigh, NC, USA ; Mirabedini, M.R. ; Kuehn, R.T. ; Wortman, J.J.
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Single gate 0.15 CM CMOS devices have been successfully fabricated using in-situ boron doped polycrystalline Si/sub 1-x/Ge/sub x/ (poly-Si/sub 1-x/Ge/sub x/) as the gate material for both surface channel n- and p-MOSFETs. The p/sup +/ poly-Si/sub 1-x/Ge/sub x/ gate electrodes were deposited by rapid thermal chemical vapor deposition using a Si/sub 2/H/sub 6/, GeH/sub 4/, B/sub 2/H/sub 6/ and H/sub 2/ gas mixture. The experimental results showed that the developed single gate process provides a minimized poly-depletion effect and boron penetration. By changing the Ge content in the poly-Si/sub 1-x/Ge/sub x/ films from x=0.3 to 0.76, a threshold voltage (V/sub T/) adjustment of about 0.3 V was achieved with the same channel doping and gate oxide thickness. Computer simulations indicate that an improved current drive and transconductance can be achieved in p/sup +/ poly-Si/sub 1-x/Ge/sub x/ gate devices compared to poly-Si gate devices with a fixed V/sub T/. This work demonstrates a potentially promising approach for deep submicron single gate bulk CMOS technology.

Published in:

Electron Devices Meeting, 1997. IEDM '97. Technical Digest., International

Date of Conference:

10-10 Dec. 1997