Skip to Main Content
An AlGaAs/GaAs multi-quantum well vertical-cavity surface-emitting laser diode (VCSELD) has been grown on a Si substrate using metalorganic chemical vapor deposition. The VCSELD structure consists of ten quantum well active layers and a 23-pair of AlAs/Al/sub 0.1/Ga/sub 0.9/As distributed Bragg reflectors. The VCSELD exhibited a threshold current of 223 mA under continuous-wave conditions at 220 K. Electroluminescence observation showed that optical degradation is caused by the generation and growth of dark-line defects.
Date of Conference: 10-10 Dec. 1997