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220 K continuous-wave operation of AlGaAs/GaAs multi-quantum well vertical-cavity surface-emitting laser on Si substrate

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4 Author(s)
Egawa, T. ; Res. Center for Micro-Struct. Devices, Nagoya Inst. of Technol., Japan ; Nakanishi, N. ; Jimbo, T. ; Umeno, M.

An AlGaAs/GaAs multi-quantum well vertical-cavity surface-emitting laser diode (VCSELD) has been grown on a Si substrate using metalorganic chemical vapor deposition. The VCSELD structure consists of ten quantum well active layers and a 23-pair of AlAs/Al/sub 0.1/Ga/sub 0.9/As distributed Bragg reflectors. The VCSELD exhibited a threshold current of 223 mA under continuous-wave conditions at 220 K. Electroluminescence observation showed that optical degradation is caused by the generation and growth of dark-line defects.

Published in:

Electron Devices Meeting, 1997. IEDM '97. Technical Digest., International

Date of Conference:

10-10 Dec. 1997