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A new approach to the physics-based noise analysis of semiconductor devices operating in large signal, (quasi) periodic regime

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4 Author(s)
Bonani, F. ; Dipt. di Elettronica, Politecnico di Torino, Italy ; Donati Guerrieri, S. ; Ghione, G. ; Pirola, M.

The paper presents a novel technique to evaluate the noise of semiconductor devices under large-signal, (quasi) periodic operation through the extension of the Impedance Field Method (IFM). A numerical implementation within the framework of a drift-diffusion model is discussed making use of the Harmonic Balance (HB) technique applied to the carrier and potential distributions, and the approach is validated through the noise analysis of a varactor diode RF frequency doubler.

Published in:

Electron Devices Meeting, 1997. IEDM '97. Technical Digest., International

Date of Conference:

10-10 Dec. 1997

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