A new approach to the physics-based noise analysis of semiconductor devices operating in large signal, (quasi) periodic regime

The paper presents a novel technique to evaluate the noise of semiconductor devices under large-signal, (quasi) periodic operation through the extension of the Impedance Field Method (IFM). A numerical implementation within the framework of a drift-diffusion model is discussed making use of the Harmonic Balance (HB) technique applied to the carrier and potential distributions, and the approach is validated through the noise analysis of a varactor diode RF frequency doubler.