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RTD/HFET low standby power SRAM gain cell

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3 Author(s)
J. P. A. van der Wagt ; Raytheon TI Syst., Dallas, TX, USA ; A. C. Seabaugh ; E. A. Beam

A 50-nW standby power compound semiconductor tunneling-based static random access memory SRAM (TSRAM) cell is demonstrated by combining ultralow current-density resonant-tunneling diodes (RTDs) and heterostructure field-effect transistors (HFETs) in one integrated process on an InP substrate. This power represents over two orders of magnitude improvement over previous III-V static memory cells. By increasing the number of vertically integrated RTD's we obtain a 100 nW tri-state memory cell. The cell concept applies to any material system in which low current-density negative differential resistance devices are available.

Published in:

IEEE Electron Device Letters  (Volume:19 ,  Issue: 1 )