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Plasma charging damage on ultrathin gate oxides

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2 Author(s)
Donggun Park ; Dept. of Electr. Eng. & Comput. Sci., California Univ., Berkeley, CA, USA ; Chenming Hu

Capacitor C-V and threshold voltage and subthreshold swing of MOSFET's with gate oxide thickness varying from 2.2 to 7.7 nm are analyzed to study the plasma charging damage by the metal etching process. Surprisingly, the ultrathin gate oxide has better immunity to plasma charging damage than the thicker oxide, thanks to the excellent tolerance of the thin gate oxide to tunneling current. This finding has very positive implications for the prospect of manufacturable scaling of gate oxide to very thin thickness.

Published in:

IEEE Electron Device Letters  (Volume:19 ,  Issue: 1 )