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Switching voltage transient protection schemes for high-current IGBT modules

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2 Author(s)
Chokhawala, R.S. ; ABB Semicond. AG, Lenzburg, Switzerland ; Sobhani, S.

The emergence of high-current and faster switching insulated gate bipolar transistor (IGBT) modules has made it imperative for designers to look at ways of protecting these devices against detrimental switching voltage transients that are a common side effect of these efficient transistors. This paper discusses protection criteria for both normal switching operation and short-circuit operation and covers in detail some of the protection schemes that were designed to address these problems

Published in:

Industry Applications, IEEE Transactions on  (Volume:33 ,  Issue: 6 )

Date of Publication:

Nov/Dec 1997

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