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Integrated circuit model development for EMP

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4 Author(s)
Kleiner, C. ; Rockwell International Autonetics Anaheim, California ; Nelson, J. ; Vassallo, F. ; Heaton, E.

The response of Integrated Circuits (IC) to pulsed snd gated sine-wave stimuli can be used to develop reasonably accurate device models for EMP assessment. These IC models can then be used in conjunction with circuit and transfer function models to determine the failure threshold (upset and burnout) to postulated EMP distrubance.

Published in:

Nuclear Science, IEEE Transactions on  (Volume:21 ,  Issue: 6 )

Date of Publication:

Dec. 1974

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