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Radiation hardening of CMOS/SOS integrated circuits

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1 Author(s)
K. M. Schlesier ; RCA Laboratories Princeton, New Jersey

Radiation tolerant CMOS circuits can be made by building them in a thin film of silicon-on-sapphire (SOS) with a hard gate dielectric. Radiation effects in MOS devices are reviewed, and the problems associated with radiation tolerant CMOS/SOS devices are described. Some gate dielectric techniques which show promise in hardening CMOS circuits are presented, and the radiation behavior of Al2O3 gate dielectrics are described.

Published in:

IEEE Transactions on Nuclear Science  (Volume:21 ,  Issue: 6 )