Cart (Loading....) | Create Account
Close category search window
 

Perpendicular magnetic tunnel junctions with synthetic antiferromagnetic pinned layers based on [Co/Pd] multilayers

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

5 Author(s)
Chang, Yao-Jen ; Taiwan SPIN Research Center, National Yunlin University of Science and Technology, Douliou, Yunlin 64002, Taiwan ; Canizo-Cabrera, A. ; Garcia-Vazquez, Valentin ; Chang, Yang-Hua
more authors

Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1063/1.4799974 

We fabricated MgO-based perpendicular magnetic tunnel junctions (p-MTJ) with Ta/CoFeB magnetic electrodes. Synthetic antiferromagnetic (SAF) pinned layers with perpendicular magnetic anisotropy (PMA) were included into the p-MTJs by using two Co/Pd multilayers (MLs) separated by a thin Ru spacer layer. The MTJs stack has the structure bottom contact/free layer CoFeB (1.0)/MgO (1)/pinned layer CoFeB (1.0)/Ta spacer layer/SAF/Ru cap layer/top contact (the units in parenthesis are in nanometers). The SAF was optimized by changing the repetition period n in one of the Co/Pd multilayers and the Ru thickness in order to obtain PMA with antiferromagnetic (AFM) coupling. The Ru spacer values were 0.7, 0.75, 0.8, 0.85, and 0.9 nm. The magnetic studies show that all magnetic films, including the Ta/CoFeB layers, are perpendicularly magnetized. The two Co/Pd MLs are AFM coupled for n > 2. Controlling the Ru thickness, the interlayer exchange coupling strength Jiec can be tailored. Jiec vs. Ru thickness exhibits a simple exponential decay. The electrical properties of the full p-MTJ with SAF show a low resistance-area (RA) product of 44.7 Ω μm2 and a tunnel magnetoresistance (TMR) ratio of 10.2%.

Published in:

Journal of Applied Physics  (Volume:113 ,  Issue: 17 )

Date of Publication:

May 2013

Need Help?


IEEE Advancing Technology for Humanity About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies

A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2014 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.