By Topic

Post-Si Programmable ESD Protection Circuit Design: Mechanisms and Analysis

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$33 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

17 Author(s)
Wang, X. ; Dept. of Electrical Engineering, University of California, Riverside, CA, USA ; Shi, Z. ; Liu, J. ; Lin, L.
more authors

This paper reports new mechanisms, design, and analysis of novel electrostatic discharge (ESD) protection solutions, which enable post-Si field-programmable ESD protection circuit design for the first time. Two new ESD protection concepts, nano-crystal quantum-dot (NC-QD) and silicon–oxide–nitride–oxide–silicon (SONOS)-based ESD protection, are presented. Experiments validated the two new programmable ESD protection mechanisms. Prototype designs demonstrated a wide adjustable ESD triggering voltage ({V}_{{t}1}) range of \Delta {V}_{{t}1}\sim \hbox { 2 V} , very fast response ({t}_{1}) to ESD transients of rising time {t}_{r}\sim \hbox { 100 pS} and pulse duration {t}_{d}\sim \hbox { 1 nS} , ESD protection capability ({I}_{{t}2}) of at least 25 \hbox {mA}/\mu\hbox {m} for human body model (HBM) and 400 \hbox {mA}/\mu\hbox {m} for charged device model (CDM) equivalent stressing, and very low leakage current ({I}_{\rm \leak}) as low as 1.2 pA. Field-programmable ESD protection circuit design examples are discussed.

Published in:

Solid-State Circuits, IEEE Journal of  (Volume:48 ,  Issue: 5 )