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Post-Si Programmable ESD Protection Circuit Design: Mechanisms and Analysis

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17 Author(s)
Wang, X. ; Dept. of Electrical Engineering, University of California, Riverside, CA, USA ; Shi, Z. ; Liu, J. ; Lin, L.
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This paper reports new mechanisms, design, and analysis of novel electrostatic discharge (ESD) protection solutions, which enable post-Si field-programmable ESD protection circuit design for the first time. Two new ESD protection concepts, nano-crystal quantum-dot (NC-QD) and silicon–oxide–nitride–oxide–silicon (SONOS)-based ESD protection, are presented. Experiments validated the two new programmable ESD protection mechanisms. Prototype designs demonstrated a wide adjustable ESD triggering voltage $({V}_{{t}1})$ range of $Delta{V}_{{t}1}sim hbox{ 2 V}$, very fast response $({t}_{1})$ to ESD transients of rising time ${t}_{r}sim hbox{ 100 pS}$ and pulse duration ${t}_{d}sim hbox{ 1 nS}$, ESD protection capability $({I}_{{t}2})$ of at least 25 $hbox{mA}/muhbox{m}$ for human body model (HBM) and 400 $hbox{mA}/muhbox{m}$ for charged device model (CDM) equivalent stressing, and very low leakage current $({I}_{rm leak})$ as low as 1.2 pA. Field-programmable ESD protection circuit design examples are discussed.

Published in:

Solid-State Circuits, IEEE Journal of  (Volume:48 ,  Issue: 5 )

Date of Publication:

May 2013

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