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High-brightness AlGaInP light emitting diodes

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5 Author(s)
Vanderwater, D.A. ; Optoelectron. Div., Hewlett-Packard Co., San Jose, CA, USA ; Tan, I.‐H. ; Hofler, G.E. ; DeFevere, D.C.
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First commercially introduced in 1990, AlGaInP light emitting diodes (LEDs) currently are the highest (luminous) efficiency visible solid-state emitters produced to date in the red through yellow spectral regime. The attainment of this high-efficiency performance is a result of the development of advanced metalorganic chemical vapor deposition crystal growth techniques, which have facilitated the high-quality growth of this quaternary alloy as well as the implementation of complex device designs. Furthermore, the highest efficiency family of AlGaInP devices (based upon a transparent-substrate platform and commercially introduced in 1994) have been realized as result of the development and implementation of direct compound semiconductor wafer bonding technology. As a result, the luminous efficiency of AlGaInP LEDs exceeds or rivals that of unfiltered incandescent lamps and other conventional lighting sources. Further improvements in these techniques (and the realization of efficient, high-power LEDs) are expected to make AlGaInP LEDs even more competitive with conventional lamp technology, thus enhancing the position of LED's in many applications as a preferred lighting source

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Proceedings of the IEEE  (Volume:85 ,  Issue: 11 )