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High Q microwave inductors in CMOS double-metal technology and its substrate bias effects for 2 GHz RF ICs application

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5 Author(s)
Min Park ; Div. of Semicond. Technol., Electron. & Telecommun. Res. Inst., Taejon, South Korea ; Cheon Soo Kim ; Jong Moon Park ; Hyun Kyu Yu
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This paper presents high quality factor (Q) microwave inductors (up to 20) fabricated on a high-resistivity substrate with a thick-metal layer integrated by using only CMOS double-metal interconnection technology for 2 GHz RF ICs applications. A quality factor Q of 20.1 at 3.25 GHz for 11.9 nH-inductor has been achieved. Also we report a low-loss substrate bias technique to improve the Q of the inductors.

Published in:

Electron Devices Meeting, 1997. IEDM '97. Technical Digest., International

Date of Conference:

10-10 Dec. 1997