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This paper presents high quality factor (Q) microwave inductors (up to 20) fabricated on a high-resistivity substrate with a thick-metal layer integrated by using only CMOS double-metal interconnection technology for 2 GHz RF ICs applications. A quality factor Q of 20.1 at 3.25 GHz for 11.9 nH-inductor has been achieved. Also we report a low-loss substrate bias technique to improve the Q of the inductors.
Date of Conference: 10-10 Dec. 1997