By Topic

Effect of Device Layout on the Stability of RF MOSFETs

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$33 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

2 Author(s)
Yongho Oh ; Electrical Engineering, Korea University, Seoul, Korea, Republic of ; Jae-Sung Rieh

In this paper, the stability of RF MOSFETs is investigated in terms of the stability-factor (k -factor) for various layout schemes and device dimensions based on two different RFCMOS technologies. To systematically analyze the effect of small-signal device model parameters on RF MOSFET stability, the expression for k-factor is derived as a function of the small-signal model parameters of RF MOSFETs. Based on the expression, the effect of small-signal model parameters on the stability of RF MOSFETs is explored along with its bias dependence. In addition, the effect of wiring schemes, number of gate fingers, gate finger pitch, and gate length is examined based on various device structures. It is shown that the transconductance and capacitances are the dominant device parameters to determine the stability of RF MOSFETs. The result also indicates that the stability of RF MOSFETs is strongly affected by the details of layout scheme and lateral dimension. Additionally, it was found that there is a tradeoff between device stability and speed. This study is expected to serve a guideline for the device design and optimization for stable operation of RF MOSFETs and circuits based on them.

Published in:

IEEE Transactions on Microwave Theory and Techniques  (Volume:61 ,  Issue: 5 )