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A High Layer Scalability TSV-Based 3D-SRAM With Semi-Master-Slave Structure and Self-Timed Differential-TSV for High-Performance Universal-Memory-Capacity-Platforms

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10 Author(s)
Meng-Fan Chang ; Dept. of Electr. Eng., Nat. Tsing Hua Univ., Hsinchu, Taiwan ; Chih-Sheng Lin ; Wei-Cheng Wu ; Ming-Pin Chen
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TSV-based 3D die-stacking technology enables the reuse of pre-designed, pre-tested logic dies stacked with multiple memory layers (NSTACK) in various configurations to form a universal-memory-capacity platform (UMCP). However, conventional 3D memories suffer speed, power and yield overheads due to the large parasitic load of TSV and cross-layer PVT variations when implemented in large NSTACK with wide IO, especially using via-last TSVs. This work proposes a semi-master-slave (SMS) memory structure with self-timed differential-TSV signal transfer (STDT) scheme to improve the speed, power, and yield of 3D memory devices, while providing high scalability in NSTACK for 3D-UMCP. The SMS scheme achieves the following: 1) a constant-load logic-SRAM interface across various NSTACK; 2) high tolerance for variations in cross-layer PVT, and 3) at-speed pre-bonding KGD sorting. The STDT scheme employs a TSV-load tracking scheme to achieve small TSV voltage swing for suppressing power and speed overheads of cross-layer TSV signal communication resulting from large TSV parasitic loads, particularly in UMCP designs with scalable NSTACK and wide-IO. To verify the viability of the proposed structure and scheme, we developed a 2-layer 32 kb 3D-SRAM testchip with layer-scalable test-modes using a via-last TSV process with die-to-die bonding. This testchip confirmed the functionality and demonstrated superior scalability in NSTACK with small speed overheads.

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Solid-State Circuits, IEEE Journal of  (Volume:48 ,  Issue: 6 )