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1.2-V Supply, 100-nW, 1.09-V Bandgap and 0.7-V Supply, 52.5-nW, 0.55-V Subbandgap Reference Circuits for Nanowatt CMOS LSIs

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4 Author(s)
Osaki, Y. ; Department of Electrical and Electronic Engineering, Graduate School of Engineering, Kobe University, Kobe, Japan ; Hirose, T. ; Kuroki, N. ; Numa, M.

This paper presents bandgap reference (BGR) and sub-BGR circuits for nanowatt LSIs. The circuits consist of a nano-ampere current reference circuit, a bipolar transistor, and proportional-to-absolute-temperature (PTAT) voltage generators. The proposed circuits avoid the use of resistors and contain only MOSFETs and one bipolar transistor. Because the sub-BGR circuit divides the output voltage of the bipolar transistor without resistors, it can operate at a sub-1-V supply. The experimental results obtained in the 0.18-$mu$m CMOS process demonstrated that the BGR circuit could generate a reference voltage of 1.09 V and the sub-BGR circuit could generate one of 0.548 V. The power dissipations of the BGR and sub-BGR circuits corresponded to 100 and 52.5 nW.

Published in:

Solid-State Circuits, IEEE Journal of  (Volume:48 ,  Issue: 6 )

Date of Publication:

June 2013

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