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A 453-/spl mu/W 53 - 70-GHz Ultra-Low-Power Double-Balanced Source-Driven Mixer Using 90-nm CMOS Technology

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6 Author(s)
Wei-Tsung Li ; Industrial Technology Research Institute (ITRI), Hsinchu, Taiwan ; Hong-Yuan Yang ; Yun-Chieh Chiang ; Jeng-Han Tsai
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An ultra-low-power consumption and ultra-low local oscillator (LO) power double-balanced down-conversion mixer using standard 90-nm CMOS technology is presented in this paper. By employing a weak inversion biasing technique in a source-driven topology, the proposed V-band mixer can operate at microwatt power consumption of 453 μW and has an ultra low LO power of -6 dBm. In addition, under 1.2-V standard supply voltage, the down-conversion mixer exhibits excellent conversion-gain flatness of 5.9±1.5 dB and the measured LO-to-RF isolation is more than 37 dB from 53 to 70 GHz, and OP1 dB of -9.2 dBm at RF frequency of 60 GHz. Based on aforementioned results, the presented monolithic microwave integrated circuit can mitigate power-hungry issues while providing reasonable RF performance, which is important for a low-power communication system.

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IEEE Transactions on Microwave Theory and Techniques  (Volume:61 ,  Issue: 5 )