By Topic

A 453-/spl mu/W 53 - 70-GHz Ultra-Low-Power Double-Balanced Source-Driven Mixer Using 90-nm CMOS Technology

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

6 Author(s)
Wei-Tsung Li ; Dept. of the Electr. Eng. & the Grad. Inst. of Commun. Eng., Nat. Taiwan Univ., Taipei, Taiwan ; Hong-Yuan Yang ; Yun-Chieh Chiang ; Jeng-Han Tsai
more authors

An ultra-low-power consumption and ultra-low local oscillator (LO) power double-balanced down-conversion mixer using standard 90-nm CMOS technology is presented in this paper. By employing a weak inversion biasing technique in a source-driven topology, the proposed V-band mixer can operate at microwatt power consumption of 453 μW and has an ultra low LO power of -6 dBm. In addition, under 1.2-V standard supply voltage, the down-conversion mixer exhibits excellent conversion-gain flatness of 5.9±1.5 dB and the measured LO-to-RF isolation is more than 37 dB from 53 to 70 GHz, and OP1 dB of -9.2 dBm at RF frequency of 60 GHz. Based on aforementioned results, the presented monolithic microwave integrated circuit can mitigate power-hungry issues while providing reasonable RF performance, which is important for a low-power communication system.

Published in:

Microwave Theory and Techniques, IEEE Transactions on  (Volume:61 ,  Issue: 5 )