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Photo stability of solution-processed low-voltage high mobility zinc-tin-oxide/ZrO2 thin-film transistors for transparent display applications

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2 Author(s)
Ha, Tae-Jun ; Microelectronics Research Center, The University of Texas at Austin, Austin, Texas 78758, USA ; Dodabalapur, Ananth

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We report solution-processed low-voltage zinc-tin-oxide (ZTO)/zirconium-oxide thin-film transistors (TFTs) possessing a field-effect mobility of ∼10 cm2/Vs, a threshold voltage of 0.1 V, and an on-off current ratio of ∼1 × 109. These TFTs exhibit very small hysteresis windows in both dark and illuminated conditions. We also investigate the photo stability combined with prolong negative bias in these devices. Large threshold voltage shifts and sub-threshold swing degradation typically observed in ZTO TFTs are not present in our devices. We believe that these device characteristics, which stem from the electronically clean semiconductor-dielectric interface, satisfy the requirement for high quality and low power-consuming transparent displays.

Published in:

Applied Physics Letters  (Volume:102 ,  Issue: 12 )