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A V-Band Three-State Phase Shifter in CMOS-MEMS Technology

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3 Author(s)
Chia-Chan Chang ; Department of Electrical Engineering, the Department of Communications Engineering, the Center for Telecommunication Research, National Chung-Cheng University, Chiayi, Taiwan, R.O.C. ; Ying-Chiuan Chen ; Sheng-Chi Hsieh

A V-band CMOS-MEMS switchable phase shifter based on reflection-type topology is presented in this work. The phase shifter is fabricated in 0.18-μm CMOS process with a chip size of 1.04 mm2, wherein the suspended MEMS structure is released through the post-CMOS micromachining. Three discrete phase states, including 0°, 89°, 144° at 65 GHz, can be achieved by the bi-directional fishbone actuators under 46-V actuation voltage. The measured insertion loss is 2.2±1 dB and the return loss is better than 14 dB over the 55-65 GHz frequency range, demonstrating a great potential in many applications.

Published in:

IEEE Microwave and Wireless Components Letters  (Volume:23 ,  Issue: 5 )