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Integrated Schottky diodes for sub-millimeter and THz passive imaging: Influence of detector arrays topology

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5 Author(s)
Olivier Doussin ; ISAE-Université de Toulouse, 10 avenue Edouard Belin Toulouse-France ; Damienne Bajon ; Sidina Wane ; Pierre Magnan
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This work investigates Silicon-based passive detectors in sub-millimeter and terahertz frequency range for imaging applications. Comparison of detection mechanisms related to the non-linear behavior of both MOSFET and Schottky Barrier Diodes (SBD) are discussed and figures of merit are introduced for their analysis. Influence of detector arrays geometric topology on their performances (Cutoff frequency, parasitic, Quality-factor, Sensitivity, Responsiveness, etc.) is studied based on careful experimental characterizations. Importance of proper Co-Design of Detector-Antenna system as a unified entity is underlined.

Published in:

Silicon Monolithic Integrated Circuits in RF Systems (SiRF), 2013 IEEE 13th Topical Meeting on

Date of Conference:

21-23 Jan. 2013