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Modeling, fabrication and measurement of TSVs for advanced integration of RF/high-speed components

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3 Author(s)
Lang, K.-D. ; Fraunhofer IZM, Berlin, Germany ; Ndip, I. ; Guttowksi, S.

Through silicon vias (TSV) are modeled as metal-insulator-semiconductor structures in this paper. The slow-wave, dielectric quasi-TEM and skin-effect modes are discussed. Analytical expressions for calculating the electrical parameters of TSVs, which accurately capture the transition between the modes, are proposed. The TSVs are fabricated and measured. Good correlation is obtained between TSV parameters extracted from measurement and simulation.

Published in:

Silicon Monolithic Integrated Circuits in RF Systems (SiRF), 2013 IEEE 13th Topical Meeting on

Date of Conference:

21-23 Jan. 2013