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High performance power MOSFET SPICE macromodel

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3 Author(s)
A. Maxim ; Dept. of Electron., Tech. Univ. Gh. Asachi, Iasi, Romania ; D. Andreu ; J. Boucher

This paper presents a new method of SPICE, behavioral macromodeling of power MOSFETs, that describes device's internal static equations directly with “in line equation” controlled voltage and current sources and the nonlinear interelectrode capacitances are piece-wise-linear approximated with “table defined” controlled sources. The thermal variation of model parameters are equally considered. This new macromodel gives a higher accuracy of static and dynamic power MOSFET description, with no convergence problems and with a reasonable analysis time

Published in:

Industrial Electronics, 1997. ISIE '97., Proceedings of the IEEE International Symposium on  (Volume:2 )

Date of Conference:

7-11 Jul 1997