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Point defects introduced by InN alloying into InxGa1-xN probed using a monoenergetic positron beam

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9 Author(s)
Uedono, A. ; Division of Applied Physics, Faculty of Pure and Applied Science, University of Tsukuba, Tsukuba, Ibaraki 305-8573, Japan ; Tsutsui, T. ; Watanabe, T. ; Kimura, S.
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Native defects in InxGa1-xN (x = 0.06-0.14) grown by metal organic chemical vapor deposition were studied using a monoenergetic positron beam. Measurements of Doppler broadening spectra of the annihilation radiation as a function of incident positron energy for InxGa1-xN showed that vacancy-type defects were introduced with increasing InN composition, and the major defect species was identified as complexes between a cation vacancy and a nitrogen vacancy. The concentration of the divacancy, however, was found to be suppressed by Mg doping. The momentum distribution of electrons at the InxGa1-xN/GaN interface was close to that in defect-free GaN or InxGa1-xN, which was attributed to localization of positrons at the interface due to the built-in electric field, and to suppression of positron trapping by vacancy-type defects. We have also shown that the diffusion property of positrons is sensitive to an electric field near the InxGa1-xN/GaN interface.

Published in:

Journal of Applied Physics  (Volume:113 ,  Issue: 12 )

Date of Publication:

Mar 2013

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