By Topic

Point defects introduced by InN alloying into InxGa1-xN probed using a monoenergetic positron beam

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

9 Author(s)
Uedono, A. ; Division of Applied Physics, Faculty of Pure and Applied Science, University of Tsukuba, Tsukuba, Ibaraki 305-8573, Japan ; Tsutsui, T. ; Watanabe, T. ; Kimura, S.
more authors

Your organization might have access to this article on the publisher's site. To check, click on this link: 

Native defects in InxGa1-xN (x = 0.06-0.14) grown by metal organic chemical vapor deposition were studied using a monoenergetic positron beam. Measurements of Doppler broadening spectra of the annihilation radiation as a function of incident positron energy for InxGa1-xN showed that vacancy-type defects were introduced with increasing InN composition, and the major defect species was identified as complexes between a cation vacancy and a nitrogen vacancy. The concentration of the divacancy, however, was found to be suppressed by Mg doping. The momentum distribution of electrons at the InxGa1-xN/GaN interface was close to that in defect-free GaN or InxGa1-xN, which was attributed to localization of positrons at the interface due to the built-in electric field, and to suppression of positron trapping by vacancy-type defects. We have also shown that the diffusion property of positrons is sensitive to an electric field near the InxGa1-xN/GaN interface.

Published in:

Journal of Applied Physics  (Volume:113 ,  Issue: 12 )