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Analytical Extraction of a Schottky Diode Model From Broadband S-Parameters

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6 Author(s)
Aik Yean Tang ; GHz Centre, Terahertz and Millimetre Wave Laboratory, Dept. of Microtechnology and Nanoscience, Chalmers University of Technology, Göteborg, Sweden ; Vladimir Drakinskiy ; Klas Yhland ; Jörgen Stenarson
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We present an analytic method to extract Schottky diode parasitic model parameters. All the ten unknown model parameters are extracted via a straightforward step-by-step procedure. The challenges for a proper finger inductance and series resistance extraction are discussed and solutions are recommended. The proposed method is evaluated using three sets of S-parameter data for GaAs-based planar Schottky diodes, i.e., data from measurement up to 110 GHz and 3-D electromagnetic full-wave simulations up to 600 GHz. The extracted models agree well with the measured and simulated data.

Published in:

IEEE Transactions on Microwave Theory and Techniques  (Volume:61 ,  Issue: 5 )