Referenced Items are not available for this document.
The authors report the first successful demonstration of an integrated circuit process on planar InP substrates that incorporates a stacked single layer MBE growth of HEMTs and HBTs. In this process, the HBT layers are patterned and selectively wet etched to expose the HEMT layers after the MBE growth is completed. The authors report functional HEMTs and HBTs on the same wafer, with pertinent DC and microwave measurements
Published in:
Electronics Letters
(Volume:33
,
Issue:
24
)
Date of Publication: 20 Nov 1997
- Page(s):
- 2065 - 2066
- ISSN :
- 0013-5194
- INSPEC Accession Number:
- 5776383
- Digital Object Identifier :
- 10.1049/el:19971384
- Product Type:
- Journals & Magazines
- Date of Current Version :
- 06 August 2002
- Issue Date :
- 20 Nov 1997
- Sponsored by :
- Institution of Engineering and Technology
About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies
A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2013 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.
