Cart (Loading....) | Create Account
Close category search window

Single Event Effect Analysis on DC and RF Operated AlGaN/GaN HEMTs

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

4 Author(s)
Rostewitz, M. ; Tesat-Spacecom GmbH & Co. KG, Backnang, Germany ; Hirche, K. ; Latti, J. ; Jutzi, E.

Heavy ion irradiation testing was performed on AlGaN/GaN High Electron Mobility Transistors (HEMTs), both under DC and RF operation. Single gate finger radiation test structures and multiple gate finger RF power cells were tested and failure mechanisms analyzed. Chip level peak voltage measurements on L-band power AlGaN/GaN HEMTs are compared to Single Event Burn-out voltage levels extracted from DC Single Event Effect (SEE) test results.

Published in:

Nuclear Science, IEEE Transactions on  (Volume:60 ,  Issue: 4 )

Date of Publication:

Aug. 2013

Need Help?

IEEE Advancing Technology for Humanity About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies

A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2014 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.