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A compact P+ contact resistance model for characterization of substrate coupling in modern lightly doped CMOS processes

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4 Author(s)
Ming Shen ; Department of Electronic Systems, Aalborg University, 9220, Denmark ; Jan H. Mikkelsen ; Ole K. Jensen ; Torben Larsen

Compact modeling of P+ contact resistances is important for characterization of substrate noise coupling in mixed-signal System on Chips (SoCs). Existing contact resistance models can handle uniformly doped bulk or epitaxial substrates. However, compact contact resistance models feasible for modern lightly-doped CMOS processes with P-well layers are still unavailable. This paper presents a new compact resistance model aiming at solving this problem. A Conformal Mapping (CM) method is used to derive the closed-form expressions for the resistances in the model. The model requires no fitting factors, and it is scalable to layout/substrate parameters. The proposed model can also be used to predict noise coupling in terms of S-parameters. The model validation is done by both EM simulations and measurements, and satisfactory agreement is found between the modeled and measured resistances as well as S-parameters.

Published in:

Microwave Integrated Circuits Conference (EuMIC), 2012 7th European

Date of Conference:

29-30 Oct. 2012