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Reduction of ambipolarity in carbon nanotube field-effect transistor by non-uniform source/ drain doping and increased extension length

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2 Author(s)
Ahmed, Z. ; Dept. of ECE, Hong Kong Univ. of Sci. & Technol., Hong Kong, China ; Mansun Chan

The effect of non-degenerate doping on the ambipolarity of a conventional carbon nanotube field effect transistor (C-CNFET) is investigated in this paper together with different source/drain extension lengths. The ambipolarity ratio for C-CNFET can be reduced by eight orders of magnitude, by using reduced doping levels and increased extension lengths, at the cost of one order of magnitude reduction in on-state current.

Published in:

Electron Devices and Solid State Circuit (EDSSC), 2012 IEEE International Conference on

Date of Conference:

3-5 Dec. 2012